Semiconductor memory device and method for manufacturing the same
US10115733B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2016 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | Nov 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/696
Abstract
A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.