Method of manufacturing a semiconductor device

US10115817B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Markus Zundel · Egmating, DE
• Peter Brandl · Linz, AT

Key dates

• Filing date: May 18, 2016
• Grant date: Oct 30, 2018
• Expiry date: May 18, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/114

Abstract

A method of manufacturing a semiconductor device includes forming a first semiconductor layer on a semiconductor substrate of a first conductivity type having a continuous first area and a second area, introducing dopants of the first conductivity type in the continuous first area of the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer, and forming trenches in the second semiconductor layer in the continuous first area.