Semiconductor device having an oxide semiconductor layer comprising a nanocrystal
US10115831B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2016 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | Jul 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphousness/non-crystals and microcrystals, where an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an n-type caused by entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented and a contact resistance with a source and drain electrodes can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.