Integrated circuit implementing a VCSEL array or VCSEL device
US10116115B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 22, 2017 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | Feb 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/357
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device includes an array of VCSEL devices with an annealed oxygen implant region (annealed at a temperature greater than 800° C.) that surrounds and extends laterally between the VCSEL devices. A common anode and a common cathode can be electrically coupled to the VCSEL devices, with the common anode overlying the annealed oxygen implant region. The annealed oxygen implant region can funnel current into active optical regions of the VCSEL devices and provide current isolation between the VCSEL devices while avoiding an isolation etch between VCSEL devices. In another embodiment, a semiconductor device includes an annealed oxygen implant region surrounding a VCSEL device. The VCSEL device(s) can be formed from a multi-junction layer structure where built-in hole charge Qp for an intermediate p-type layer relative to built-in electron charge Qn for a bottom n-type layer is configured for diode-like current-voltage characteristics of the VCSEL device(s).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.