Memory bank signal coupling buffer and method
US10121523B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2017 |
| Grant date | Nov 6, 2018 |
| Priority date | — |
| Expiry date | Jan 13, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4097
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory array contains a plurality of banks coupled to each other by a plurality of data lines. Each of the data lines is divided into a plurality of segments within the array. Respective bidirectional buffers couple read data from one of the segments to another in a first direction, and to couple write data from one of the segments to another in a second direction that is opposite the first direction. The data lines may be local data read/write lines that couple different banks of memory cells to each other and to respective data terminals, digit lines that couple memory cells in a respective column to respective sense amplifiers, word lines that activate memory cells in a respective row, or some other signal line within the array. The memory array also includes precharge circuits for precharging the segments of respective data lines to a precharge voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.