Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation
US10121657B2 · kind B2 · utility
4Cited by
18References
26Claims
0Family size
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Key dates
| Filing date | May 10, 2016 |
| Grant date | Nov 6, 2018 |
| Priority date | — |
| Expiry date | May 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/834
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Apparatuses and methods are provided for manufacturing diamond electronic devices. The method includes at least one of the following acts: positioning a substrate in a plasma enhanced chemical vapor deposition (PECVD) reactor; controlling temperature of the substrate by manipulating microwave power, chamber pressure, and gas flow rates of the PECVD reactor; and growing phosphorus doped diamond layer on the substrate using a pulsed deposition comprising a growth cycle and a cooling cycle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.