Robert J. Nemanich
11Patents
4h-index
15Co-inventors
57Inventor score
Filing activity: Jul 16, 1984 → Apr 28, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5155559A | High temperature refractory silicide rectifying contact | Electricity | 11 | Expired |
| US8188456B2 | Thermionic electron emitters/collectors have a doped diamond layer with variable doping concentrations | Electricity | 10 | Active |
| US5212401A | High temperature rectifying contact | Electricity | 6 | Expired |
| US4529619A | Ohmic contacts for hydrogenated amorphous silicon | Electricity | 5 | Expired |
| US10121657B2 | Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation | Electricity | 4 | Active |
| US10418475B2 | Diamond based current aperture vertical transistor and methods of making and using the same | Electricity | 4 | Active |
| US10704160B2 | Sample stage/holder for improved thermal and gas flow control at elevated growth temperatures | Emerging Cross-Sectional Technologies | 4 | Active |
| US9922791B2 | Phosphorus doped diamond electrode with tunable low work function for emitter and collector applications | Electricity | 4 | Active |
| US11063162B2 | Current generation from radiation with diamond diode-based devices for detection or power generation | Electricity | 1 | Active |
| US11380763B2 | Contact structures for n-type diamond | Electricity | 0 | Active |
| US11152483B2 | Doped encapsulation material for diamond semiconductors | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.