Semiconductor device and method for producing same
US10121663B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2015 |
| Grant date | Nov 6, 2018 |
| Priority date | — |
| Expiry date | Apr 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a GaN device provided with: a substrate made of a semi-insulating material or a semiconductor; a channel-forming layer including a GaN layer arranged on the substrate; a gate structure in which a gate-insulating film in contact with the GaN layer is arranged on the channel-forming layer, the gate structure having a gate electrode arranged across the gate-insulating film; and a source electrode and a drain electrode that are arranged on the channel-forming layer and on opposite sides interposing the gate structure. The donor element concentration at the interface between the gate-insulating film and the GaN layer and at the lattice position on the GaN layer side with respect to the interface is set to be less than or equal to 5.0×1017 cm−3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.