Patent · US Active

Semiconductor device

US10121731B2 · kind B2 · utility

3Cited by
6References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 11, 2016
Grant dateNov 6, 2018
Priority date
Expiry dateOct 11, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/15311
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor chip having an active surface and a non-active surface opposite to the active surface, an upper insulating layer provided on the non-active surface of semiconductor chip, and a via and a connection pad penetrating the semiconductor chip and the upper insulating layer, respectively. The connection pad has a first surface exposed outside the upper insulating layer and a second surface opposite to the first surface and facing the semiconductor chip. The first surface of the connection pad is coplanar with an upper surface of the upper insulating layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.