Devices related to barrier for metallization of gallium based semiconductor
US10121780B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2016 |
| Grant date | Nov 6, 2018 |
| Priority date | — |
| Expiry date | Aug 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15192
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
Disclosed are structures and methods related to a barrier layer for metallization of a selected semiconductor such as indium gallium phosphide (InGaP). In some embodiments, the barrier layer can include tantalum nitride (TaN). Such a barrier layer can provide desirable features such as barrier functionality, improved adhesion of a metal layer, reduced diffusion, reduced reactivity between the metal and InGaP, and stability during the fabrication process. In some embodiments, structures formed in such a manner can be configured as an emitter of a gallium arsenide (GaAs) heterojunction bipolar transistor (HBT) or an on-die high-value capacitance element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.