Cristian Cismaru
7Patents
2h-index
6Co-inventors
44Inventor score
Filing activity: Dec 13, 2000 → Jun 29, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9461153B2 | Devices and methods related to a barrier for metallization of a gallium based semiconductor | Electricity | 4 | Active |
| US6440756B2 | Reduction of plasma charge-induced damage in microfabricated devices | Electricity | 3 | Expired |
| US10121780B2 | Devices related to barrier for metallization of gallium based semiconductor | Electricity | 1 | Active |
| US12113125B2 | Bipolar transistor having collector with doping concentration discontinuity | Electricity | 1 | Active |
| US9847407B2 | Devices and methods related to a gallium arsenide Schottky diode having low turn-on voltage | Electricity | 1 | Active |
| US10439051B2 | Methods related to a semiconductor structure with gallium arsenide and tantalum nitride | Electricity | 0 | Active |
| US12363931B2 | Bipolar transistor having collector with doping concentration grading | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.