Resistor structure with high resistance based on very thin semiconductor layer

US10121846B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Alban Zaka · Dresden, DE
• Ignasi Cortes Mayol · Dresden, DE
• Tom Herrmann · Dresden, DE
• El Mehdi Bazizi · Saratoga Springs, US
• John Morgan · Portland, US

Key dates

• Filing date: Jun 13, 2017
• Grant date: Nov 6, 2018
• Expiry date: Jun 13, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

The present disclosure provides resistor structures in sophisticated integrated circuits on the basis of an SOI architecture, wherein a very thin semiconductor layer, typically used for forming fully depleted SOI transistors, may be used as a resistor body. In this manner, significantly higher sheet resistance values may be achieved, thereby providing the potential for implementing high ohmic resistors into sophisticated integrated circuits.