Switching device and method of manufacturing the same
US10121862B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 28, 2017 |
| Grant date | Nov 6, 2018 |
| Priority date | — |
| Expiry date | Jul 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A switching device includes a semiconductor substrate; first and second trenches; gate insulating layers; and gate electrodes. The semiconductor substrate includes a first semiconductor region of a first conductivity type, a body region of a second conductivity type, a second semiconductor region of the first conductivity type, first and second bottom semiconductor regions of the second conductivity type disposed in areas extending to bottom surfaces of the first and second trenches, and a connection semiconductor region of the second conductivity type extending from the first trench to reach the second trench in a depth range from a depth of a lower end of the body region to a depth of the bottom surfaces of the first and second trenches, the connection semiconductor region contacting the second semiconductor region, and being connected to the body region, and the first and second bottom semiconductor regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.