SiC single crystal, SiC wafer, SiC substrate, and SiC device
US10125435B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 7, 2014 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Aug 7, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/186
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A SiC single crystal includes, in a plane substantially parallel to a c-plane thereof, a region (A) in which edge dislocations having a Burgers vector (A) in a specific direction are unevenly distributed, and a region (B) in which basal plane dislocations having a Burgers vector (B) in a specific direction are unevenly distributed. The region (A) is located in a <1-100> direction with respect to a facet portion, while the region (B) is located in a <11-20> direction with respect to the facet portion. A SiC substrate is produced by cutting a SiC wafer from the SiC single crystal in a direction substantially parallel to the c-plane, and cutting the SiC substrate from the SiC wafer such that the SiC substrate mainly contains one of the region (A) and the region (B). A SiC device is fabricated using the SiC substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.