Method of fabricating semiconductor device
US10128112B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 16, 2017 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | May 18, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device is provided. The method includes forming a dummy gate electrode on a substrate, forming a trench on a side surface of the dummy gate electrode, performing a bake process of removing an impurity from the trench and forming a source/drain in the trench, wherein the bake process comprises a first stage and a second stage following the first stage, an air pressure in which the substrate is disposed during the first stage is different from an air pressure in which the substrate is disposed during the second stage, and the bake process is performed while the substrate is on a stage rotating the substrate, wherein a revolution per minute (RPM) of the substrate during the first stage is different from a revolution per minute (RPM) of the substrate during the second stage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.