Integrated circuit device including through-silicon via structure and method of manufacturing the same
US10128168B2 · kind B2 · utility
3Cited by
1References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2014 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Dec 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit (IC) device includes a semiconductor substrate having a via hole extending through at least a part thereof, a conductive structure in the via hole, a conductive barrier layer adjacent the conductive structure; and a via insulating layer interposed between the semiconductor substrate and the conductive barrier layer. The conductive barrier layer may include an outer portion oxidized between the conductive barrier layer and the via insulating layer, and the oxidized outer portion of the conductive barrier layer may substantially surrounds the remaining portion of the conductive barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.