Semiconductor device and method for fabricating the same
US10128240B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2017 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Nov 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/259
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate including first to third regions, wherein the third region is positioned in a first direction between the first and second regions, a fin protruding on the substrate and extending in the first direction, first and second gate structures respectively formed on the fin in the first and second regions, first and second spacers formed with spacing apart from each other on the fin in the third region. The first and second spacers are sloped in a direction away from each other, and the first and second spacers and an upper surface of the fin define a plurality of acute angles, the first and second spacers defining a recess, the fin and the first and second spacers defining sidewalls of the recess, and a device isolating film substantially filling the recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.