Integrated circuit devices
US10128241B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2018 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Jan 24, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device includes a fin-type active area extending on a substrate in a first direction, a first gate line and a second gate line extending on the fin-type active area in parallel to each other in a second direction, which is different from the first direction, a first insulating capping layer covering an upper surface of the first gate line and extending in parallel to the first gate line, a second insulating capping layer covering an upper surface of the second gate line and extending in parallel to the second gate line, wherein a height of the first gate line and a height of the second gate line are different from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.