Semiconductor devices including an isolation layer on a fin and methods of forming semiconductor devices including an isolation layer on a fin
US10128246B2 · kind B2 · utility
2Cited by
9References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2017 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Jun 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices are provided. A semiconductor device includes a fin protruding from a substrate. Moreover, the semiconductor device includes first and second gate structures on the fin, and an isolation region between the first and second gate structures. The isolation region includes first and second portions having different respective widths. Related methods of forming semiconductor devices are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.