Semiconductor device
US10128254B2 · kind B2 · utility
0Cited by
8References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2016 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Jun 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a first pattern, a first gate electrode, and a second pattern. The first pattern is disposed on the substrate and extends in a first direction substantially vertical to an upper surface of the substrate, and includes a first part, a second part and a third part sequentially disposed on the substrate. The first gate electrode is connected to the second part and extends in a second direction different from the first direction. The second pattern is disposed on the substrate, extends in the first direction, is connected to the first part, and does not contact the first gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.