Dae-Jin Kwon
31Patents
8h-index
33Co-inventors
71Inventor score
Filing activity: Feb 25, 2002 → Jul 31, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9029244B2 | Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus | Emerging Cross-Sectional Technologies | 398 | Active |
| US6835621B2 | Method of fabricating non-volatile memory device having a structure of silicon-oxide-nitride-oxide-silicon | Electricity | 51 | Expired |
| US7091548B2 | Analog capacitor having at least three high-k-dielectric layers, and method of fabricating the same | Electricity | 17 | Expired |
| US7002788B2 | Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the same | Electricity | 15 | Expired |
| US7232492B2 | Method of forming thin film for improved productivity | Electricity | 15 | Expired |
| US7297591B2 | Method for manufacturing capacitor of semiconductor device | Electricity | 10 | Expired |
| US7288453B2 | Method of fabricating analog capacitor using post-treatment technique | Electricity | 9 | Expired |
| US7125767B2 | Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the same | Electricity | 8 | Expired |
| US7095460B2 | Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the same | Physics | 8 | Expired |
| US7476922B2 | Logic device having vertically extending metal-insulator-metal capacitor between interconnect layers and method of fabricating the same | Electricity | 8 | Expired |
| US7491654B2 | Method of forming a ZrO2 thin film using plasma enhanced atomic layer deposition and method of fabricating a capacitor of a semiconductor memory device having the thin film | Electricity | 7 | Active |
| US7442982B2 | Capacitor having reaction preventing layer and methods of forming the same | Electricity | 3 | Expired |
| US7615783B2 | Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the same | Physics | 3 | Expired |
| US7508649B2 | Multi-layered dielectric film of microelectronic device and method of manufacturing the same | Electricity | 3 | Active |
| US7008837B2 | Method of manufacturing capacitor by performing multi-stepped wet treatment on surface of electrode | Electricity | 3 | Expired |
| US7199003B2 | Method of manufacturing capacitor of semiconductor device by simplifying process of forming dielectric layer and apparatus therefor | Electricity | 2 | Expired |
| US7732296B2 | Method of fabricating metal-insulator-metal capacitor and metal-insulator-metal capacitor manufactured by the method | Electricity | 2 | Active |
| US9875791B2 | Semiconductor device | Physics | 1 | Active |
| US9702041B2 | Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus | Emerging Cross-Sectional Technologies | 1 | Active |
| US9754660B2 | Semiconductor device | Physics | 1 | Active |
| US7407897B2 | Capacitor of analog semiconductor device having multi-layer dielectric film and method of manufacturing the same | Emerging Cross-Sectional Technologies | 1 | Expired |
| US7888772B2 | Electronic fuse having heat spreading structure | Electricity | 1 | Active |
| US7554146B2 | Metal-insulator-metal capacitor and method of fabricating the same | Electricity | 1 | Active |
| US7679124B2 | Analog capacitor and method of manufacturing the same | Electricity | 0 | Expired |
| US10128254B2 | Semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.