Storage layer for magnetic memory with high thermal stability
US10128309B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2016 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Mar 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Memory cells and method of forming thereof are presented. The method includes forming a magnetic tunnel junction (MTJ) element which includes a fixed magnetic layer, a tunneling barrier layer and a composite free magnetic layer. The composite free magnetic layer includes an insertion layer between first and second free magnetic layers. The insertion layer includes an oxide or oxidized layer. The insertion layer increases the overall thickness of the free layer, decreasing switching current as well as thermal stability. The oxidized layer may be MgO or HfOx. A surface layer may be provided over the oxide or oxidized layer to further enhance magnetic anisotropy to further decrease switching current. The surface layer is Ta, Ti or Hf.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.