Non-volatile memory device and structure thereof
US10128313B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2016 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Feb 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/826
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In the present disclosure, a non-volatile memory cell comprises a data storage unit, a selection unit and a switching unit. The data storage unit is configured to store an information bit and has a first end and a second end. The first end is coupled to a bit line. The selection unit is configured to access the data storage unit, and the selection unit has a first end coupled to a select line, a second end coupled to the second end of the data storage unit, and a third end coupled to a source line. The switching unit is configured to perform a formation operation and has a first end coupled to a forming line and a second end coupled to the second end of the data storage unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.