Process for forming homoepitaxial tunnel barriers with hydrogenated graphene-on-graphene for room temperature electronic device applications
US10128357B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Feb 7, 2017 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Feb 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/165
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A homoepitaxial, ultrathin tunnel barrier-based electronic device in which the tunnel barrier and transport channel are made of the same material—graphene.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.