Berend T. Jonker
26Patents
5h-index
25Co-inventors
69Inventor score
Filing activity: Mar 30, 1988 → Sep 28, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4823177A | Method and device for magnetizing thin films by the use of injected spin polarized current | Electricity | 24 | Expired |
| US5874749A | Polarized optical emission due to decay or recombination of spin-polarized injected carriers | Electricity | 18 | Expired |
| US6316965A | Non-volatile reprogrammable logic circuits by combining negative differential resistance devices and magnetic devices | Electricity | 17 | Expired |
| US4828935A | Passivating layer for III-V semiconductor materials | Emerging Cross-Sectional Technologies | 11 | Expired |
| US10403753B2 | Controlling structural phase transitions and properties of two-dimensional materials by integrating with multiferroic layers | Emerging Cross-Sectional Technologies | 7 | Active |
| US9063063B2 | Low-dimensional material chemical vapor sensors | Emerging Cross-Sectional Technologies | 4 | Active |
| US9614063B2 | Homoepitaxial tunnel barriers with functionalized graphene-on-graphene and methods of making | Electricity | 2 | Active |
| US9698254B1 | Homoepitaxial tunnel barriers with functionalized graphene-on-graphene and methods of making | Electricity | 1 | Active |
| US9673047B2 | Solid phase epitaxy of 3C—SiC on Si(001) | Electricity | 1 | Active |
| US11024447B2 | Two-dimensional materials integrated with multiferroic layers | Electricity | 1 | Active |
| US11280856B2 | Direct electrical detection of current-induced spin polarization due to spin-momentum locking in topological insulators | Electricity | 0 | Active |
| US11156678B2 | Magnetic field sensor using in situ solid source graphene and graphene induced anti-ferromagnetic coupling and spin filtering | Emerging Cross-Sectional Technologies | 0 | Active |
| US11476353B2 | Lateral heterojunctions in two-dimensional materials integrated with multiferroic layers | Electricity | 0 | Active |
| US10132880B2 | Direct electrical detection of current-induced spin polarization due to spin-momentum locking in topological insulators | Electricity | 0 | Active |
| US10852370B2 | Direct electrical detection of current-induced spin polarization due to spin-momentum locking in topological insulators | Electricity | 0 | Active |
| US11817240B2 | Two-dimensional materials integrated with multiferroic layers | Electricity | 0 | Active |
| US10663773B2 | Optical modulator using the spin hall effect in metals | Physics | 0 | Active |
| US11862716B2 | Light-emitting devices having lateral heterojunctions in two-dimensional materials integrated with multiferroic layers | Electricity | 0 | Active |
| US10139655B2 | Method for an optical modulator using the spin hall effect in metals | Physics | 0 | Active |
| US10236365B2 | Homoepitaxial tunnel barriers with hydrogenated graphene-on-graphene for room temperature electronic device applications | Electricity | 0 | Active |
| US11705535B2 | Nano-indent process for creating single photon emitters in a two-dimensional materials platform | Emerging Cross-Sectional Technologies | 0 | Active |
| US11997934B2 | Laser-written submicron pixels with tunable circular polarization and write-read-erase-reuse capability on a nano material or two-dimensional heterostructure at room temperature | Physics | 0 | Active |
| US11894449B2 | Methods for forming lateral heterojunctions in two-dimensional materials integrated with multiferroic layers | Electricity | 0 | Active |
| US10686041B2 | Solid phase epitaxy of 3C-SiC on Si(001) | Electricity | 0 | Active |
| US10128357B2 | Process for forming homoepitaxial tunnel barriers with hydrogenated graphene-on-graphene for room temperature electronic device applications | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.