Light-emitting element

US10128411B2 · kind B2 · utility

Assignee

• TOYODA GOSEI CO., LTD. · JP

Inventors

• Yasuhiro Takenaka · Yokohama, JP
• Yoshiki Saito · Kiyosu, JP
• Shinichi Matsui · Tokyo, JP
• Daisuke Shinoda · Kiyosu, JP
• Hisayuki Miki · Chiba, JP
• Hironao Shinohara · Ichihara, JP

Key dates

• Filing date: Jul 6, 2017
• Grant date: Nov 13, 2018
• Expiry date: Jul 6, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

A light-emitting element includes an n-type semiconductor layer mainly including AlxGa1−XN (0.5≤x≤1), a p-type semiconductor layer, a light-emitting layer sandwiched between the n-type semiconductor layer and the p-type semiconductor layer, an n-electrode connected to the n-type semiconductor layer, and a plurality of p-electrodes that are connected to the p-type semiconductor layer and are arranged in a dot pattern. An area of the n-electrode is not less than 25% and not more than 50% of a chip area.