TOYODA GOSEI CO., LTD.
3,174Patents
1,624Active
3,174Granted
57Portfolio score
Filing activity: Oct 4, 1974 → Dec 23, 2024 · 459 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4911102A | Process of vapor growth of gallium nitride and its apparatus | Electricity | 314 | Expired |
| US6072391A | Information indicator for vehicle | Physics | 248 | Expired |
| US6990922B2 | Indication system of meter part | Emerging Cross-Sectional Technologies | 241 | Expired |
| US6871986B2 | Interior illuminating apparatus for vehicle | Performing Operations; Transporting | 239 | Expired |
| US6583550B2 | Fluorescent tube with light emitting diodes | Mechanical Engineering; Lighting; Heating | 231 | Expired |
| US5369289A | Gallium nitride-based compound semiconductor light-emitting device and method for making the same | Electricity | 198 | Expired |
| US5247533A | Gallium nitride group compound semiconductor laser diode | Electricity | 190 | Expired |
| US5808592A | Integrated light-emitting diode lamp and method of producing the same | Emerging Cross-Sectional Technologies | 187 | Expired |
| US5389571A | Method of fabricating a gallium nitride based semiconductor device with an aluminum and nitrogen containing intermediate layer | Emerging Cross-Sectional Technologies | 171 | Expired |
| US4658463A | Wiper blade | Performing Operations; Transporting | 166 | Expired |
| US6121121A | Method for manufacturing gallium nitride compound semiconductor | Electricity | 160 | Expired |
| US7491984B2 | Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices | Electricity | 158 | Expired |
| US5408120A | Light-emitting device of gallium nitride compound semiconductor | Electricity | 154 | Expired |
| US6809347B2 | Light source comprising a light-emitting element | Emerging Cross-Sectional Technologies | 143 | Expired |
| US6426512B1 | Group III nitride compound semiconductor device | Electricity | 140 | Expired |
| US5122845A | Substrate for growing gallium nitride compound-semiconductor device and light emitting diode | Electricity | 137 | Expired |
| US5203226A | Steering wheel provided with luminous display device | Emerging Cross-Sectional Technologies | 134 | Expired |
| US6550953B1 | Light emitting diode lamp device | Electricity | 132 | Expired |
| US5919422A | Titanium dioxide photo-catalyzer | Chemistry; Metallurgy | 128 | Expired |
| US6100545A | GaN type semiconductor device | Electricity | 125 | Expired |
| US7249869B2 | Light emitting device | Physics | 121 | Expired |
| US7534002B2 | Lighting device | Emerging Cross-Sectional Technologies | 118 | Active |
| US5949346A | Light-driven display device | Physics | 117 | Expired |
| US4843477A | Vehicle television receiver system | Performing Operations; Transporting | 115 | Expired |
| US6943380B2 | Light emitting device having phosphor of alkaline earth metal silicate | Emerging Cross-Sectional Technologies | 115 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.