Patent · US Active

Heater design for MEMS chamber pressure control

US10131536B2 · kind B2 · utility

1Cited by
0References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 8, 2016
Grant dateNov 20, 2018
Priority date
Expiry dateJul 24, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D1/47
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

The present disclosure relates to a MEMs package having a heating element configured to adjust a pressure within a hermetically sealed chamber by inducing out-gassing of into the chamber, and an associated method. In some embodiments, the MEMs package has a CMOS substrate having one or more semiconductor devices arranged within a semiconductor body. A MEMs structure is connected to the CMOS substrate and has a micro-electromechanical (MEMs) device. The CMOS substrate and the MEMs structure form a hermetically sealed chamber abutting the MEMs device. A heating element is electrically coupled to the one or more semiconductor devices and is separated from the hermetically sealed chamber by an out-gassing layer arranged along an interior surface of the hermetically sealed chamber. By operating the heating element to cause the out-gassing layer to release a gas, the pressure of the hermetically sealed chamber can be adjusted after it is formed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.