Semimetal compound of Pt and method for making the same
US10132002B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 6, 2017 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | Jul 6, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/42
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The disclosure relates to a semimetal compound of Pt and a method for making the same. The semimetal compound is a single crystal material of PtTe2. The method comprises: providing a PtTe2 polycrystalline material; placing the PtTe2 polycrystalline material in a reacting chamber; placing chemical transport medium in the reacting chamber; evacuating the reacting chamber to be vacuum less than 10 Pa; placing the reacting chamber in a temperature gradient, wherein the reacting chamber has a first end in a temperature from 1200 degree Celsius to 1000 degree Celsius and a second end opposite to the first end and in a temperature from 1000 degree Celsius to 900 degree Celsius; and keeping the reacting chamber in the temperature gradient for 10 days to 30 days.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.