Patent · US Active

Integrated temperature sensor for discrete semiconductor devices

US10132696B2 · kind B2 · utility

10Cited by

2References

22Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Andreas Kiep · Munich, DE
Holger Ruething · Munich, DE
Frank Wolter · Munich, DE

Key dates

Filing date	Jul 11, 2014
Grant date	Nov 20, 2018
Priority date	—
Expiry date	Feb 3, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/811
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A semiconductor die includes a discrete semiconductor device and at least one diode. The temperature of the discrete semiconductor device is determined by measuring a first forward voltage drop of the at least one diode under a first test condition, measuring a second forward voltage drop of the at least one diode under a second test condition and estimating the temperature of the discrete semiconductor device based on the difference between the first and second forward voltage drop measurements.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.