Multi-stage/multi-chamber electron-beam inspection system
US10134560B2 · kind B2 · utility
1Cited by
1References
20Claims
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Inventors
Key dates
| Filing date | May 26, 2016 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | May 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Techniques for yield management in semiconductor inspection systems are described. According to one aspect of the present invention, an electron beam inspection system includes multiple stages or multiple chambers, where the chambers/stages (N≥2) are organized to form one or more paths for wafer/mask inspection. An inspection procedure in each chamber (or at each stage) is determined by its order in the path and the relative columns used. For a system with N chambers/stages, a maximum number of N wafers/masks can be processed simultaneously.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.