Low-K dielectric layer and porogen
US10134632B2 · kind B2 · utility
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5References
21Claims
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Key dates
| Filing date | Feb 6, 2017 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | Feb 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system and method for a low-k dielectric layer are provided. A preferred embodiment comprises forming a matrix and forming a porogen within the matrix. The porogen comprises an organic ring structure with fewer than fifteen carbons and a large percentage of single bonds. Additionally, the porogen may have a viscosity greater than 1.3 and a Reynolds numbers less than 0.5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.