Inventor · Baoshan, TW

Hui-Chun Yang

14Patents

3h-index

23Co-inventors

56Inventor score

Filing activity: Aug 5, 2011 → Aug 20, 2021

Most-cited inventions

Patent	Title	Area	Cited by	Status
US9812390B2	Semiconductor devices including conductive features with capping layers and methods of forming the same	Electricity	6	Active
US9349689B2	Semiconductor devices including conductive features with capping layers and methods of forming the same	Electricity	5	Active
US9054110B2	Low-K dielectric layer and porogen	Electricity	5	Active
US9177918B2	Apparatus and methods for low k dielectric layers	Electricity	2	Active
US8994178B2	Interconnect structure and method for forming the same	Electricity	2	Active
US8889567B2	Apparatus and methods for low K dielectric layers	Electricity	2	Active
US8959620B2	System and method for composing an authentication password associated with an electronic device	Physics	1	Active
US9269614B2	Method of forming semiconductor device using remote plasma treatment	Electricity	1	Active
US11593225B2	Method and system for live-mounting database backups	Physics	0	Active
US11991494B2	Keyless control device and earphone	Electricity	0	Active
US10134632B2	Low-K dielectric layer and porogen	Electricity	0	Active
US8877083B2	Surface treatment in the formation of interconnect structure	Electricity	0	Active
US9093265B2	High UV curing efficiency for low-k dielectrics	Electricity	0	Active
US9564383B2	Low-K dielectric layer and porogen	Electricity	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.