Semiconductor device structure with semiconductor wire
US10134640B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2017 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | Jul 18, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base portion and a fin portion over the base portion. The semiconductor device structure includes a gate structure over the fin portion and extending across the fin portion. The semiconductor device structure includes a first semiconductor wire over the fin portion and passing through the gate structure. The semiconductor device structure includes a second semiconductor wire over the first semiconductor wire and passing through the gate structure. The gate structure surrounds the second semiconductor wire and separates the first semiconductor wire from the second semiconductor wire. The first semiconductor wire and the second semiconductor wire are made of different materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.