Inventor · Hsinchu, TW

Chao-Ching Cheng

123Patents
7h-index
56Co-inventors
73Inventor score

Filing activity: Nov 18, 2011 → Jul 4, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US10134640B1 Semiconductor device structure with semiconductor wire Electricity 21 Active
US10714592B2 Method of manufacturing a semiconductor device and a semiconductor device Electricity 11 Active
US10355102B2 Semiconductor device and method of manufacturing the same Electricity 11 Active
US10374059B2 Structure and formation method of semiconductor device structure with nanowires Electricity 9 Active
US10297508B2 Semiconductor device and method Electricity 9 Active
US10403550B2 Method of manufacturing a semiconductor device and a semiconductor device Electricity 8 Active
US11038044B2 Semiconductor device and manufacturing method thereof Electricity 7 Active
US10636891B2 Method of manufacturing a semiconductor device and a semiconductor device Electricity 7 Active
US10672667B2 Semiconductor device and method Electricity 6 Active
US10062782B2 Method of manufacturing a semiconductor device with multilayered channel structure Electricity 5 Active
US11038043B2 Semiconductor device and manufacturing method thereof Electricity 5 Active
US10361278B2 Method of manufacturing a semiconductor device and a semiconductor device Electricity 5 Active
US11145676B1 Memory device and multi-level memory cell having ferroelectric storage element and magneto-resistive storage element Electricity 4 Active
US11004965B2 Forming semiconductor structures with two-dimensional materials Electricity 4 Active
US10991811B2 Structure and formation method of semiconductor device structure with nanowires Electricity 3 Active
US10818777B2 Method of manufacturing a semiconductor device and a semiconductor device Electricity 3 Active
US10930795B2 Nanowire stack GAA device with inner spacer and methods for producing the same Electricity 3 Active
US10886182B2 Method of manufacturing a semiconductor device and a semiconductor device Electricity 3 Active
US10868114B2 Isolation structures of semiconductor devices Electricity 3 Active
US10930498B2 Methods for producing nanowire stack GAA device with inner spacer Electricity 3 Active
US11056400B2 Semiconductor device and method Electricity 3 Active
US10522622B2 Multi-gate semiconductor device and method for forming the same Electricity 3 Active
US8878302B2 Semiconductor device having SiGe substrate, interfacial layer and high K dielectric layer Electricity 3 Active
US9406518B2 (110) surface orientation for reducing fermi-level-pinning between high-K dielectric and group III-V compound semiconductor substrate Electricity 2 Active
US10651314B2 Nanowire stack GAA device with inner spacer and methods for producing the same Electricity 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.