Dual VPIN HDR image sensor pixel
US10134788B2 · kind B2 · utility
10Cited by
6References
14Claims
0Family size
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Key dates
| Filing date | Sep 17, 2013 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | Aug 6, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A CMOS photodiode device for use in a dual-sensitivity imaging pixel contains at least two areas of differential doping. Transistors are provided in electrical contact with these areas to govern operation of signals emanating from the photodiode on two channels, each associated with a different sensitivity to light. A plurality of such photodiodes may be incorporate into a shared arrangement forming a single pixel, in order to enhance the signals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.