Sohei Manabe
68Patents
13h-index
58Co-inventors
87Inventor score
Filing activity: Dec 26, 1984 → Mar 17, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7800192B2 | Backside illuminated image sensor having deep light reflective trenches | Electricity | 92 | Active |
| US8089036B2 | Image sensor with global shutter and in pixel storage transistor | Electricity | 56 | Active |
| US8817154B2 | Image sensor with fixed potential output transistor | Electricity | 37 | Active |
| US8017427B2 | Backside-illuminated (BSI) image sensor with backside diffusion doping | Electricity | 34 | Active |
| US4807037A | Low noise CCD image sensor having a plurality of horizontal CCD registers | Electricity | 28 | Expired |
| US9936153B1 | CMOS image sensor with dual floating diffusions per pixel for flicker-free detection of light emitting diodes | Electricity | 23 | Active |
| US4614891A | Photoconductive target of image pickup tube | Electricity | 20 | Expired |
| US9054007B2 | Image sensor pixel cell with switched deep trench isolation structure | Electricity | 20 | Active |
| US7209601B2 | CMOS image sensor using high frame rate with frame addition and movement compensation | Electricity | 17 | Expired |
| US8716768B2 | Transistor with self-aligned channel width | Electricity | 17 | Active |
| US10103193B1 | Apparatus and method for low dark current floating diffusion | Electricity | 17 | Active |
| US8228411B2 | Circuit and photo sensor overlap for backside illumination image sensor | Electricity | 15 | Active |
| US8357984B2 | Image sensor with low electrical cross-talk | Electricity | 13 | Active |
| US8294077B2 | Image sensor having supplemental capacitive coupling node | Electricity | 13 | Active |
| US10044960B2 | Systems and methods for detecting light-emitting diode without flickering | Electricity | 12 | Active |
| US8101978B2 | Circuit and photo sensor overlap for backside illumination image sensor | Electricity | 12 | Active |
| US10134788B2 | Dual VPIN HDR image sensor pixel | Electricity | 10 | Active |
| US7045754B2 | Hybrid charge coupled CMOS image sensor having an amplification transistor controlled by a sense node | Electricity | 9 | Expired |
| US8426796B2 | Image sensor having supplemental capacitive coupling node | Electricity | 9 | Active |
| US7825966B2 | High dynamic range sensor with blooming drain | Electricity | 8 | Active |
| US10741593B1 | Vertical transfer gate storage for a global shutter in an image sensor | Electricity | 7 | Active |
| US9496304B2 | Image sensor pixel cell with switched deep trench isolation structure | Electricity | 7 | Active |
| US9749569B2 | High speed rolling image sensor with ADM architecture and method of implementing thereof | Electricity | 7 | Active |
| US6974943B2 | Active pixel cell using negative to positive voltage swing transfer transistor | Electricity | 7 | Expired |
| US9967504B1 | Imaging sensor with boosted photodiode drive | Electricity | 6 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.