Semiconductor device having a dielectric layer with different thicknesses and method for forming

US10134860B2 · kind B2 · utility

Assignee

• NXP B.V. · NL

Inventors

• Jan Sonsky · Leuven, BE
• Viet Thanh Dinh · Heverlee, BE
• Jan Claes · Mortsel, BE

Key dates

• Filing date: Mar 13, 2017
• Grant date: Nov 20, 2018
• Expiry date: Mar 13, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/111

Abstract

A semiconductor device includes a first dielectric layer on a substrate, the first dielectric layer including a first dielectric portion over a first doped well region of a first conductivity type and a second dielectric portion over a second doped well region of a second conductivity type, and a second dielectric layer on the substrate directly adjacent the first dielectric layer. The second dielectric layer is over the second doped well region. A first conductive gate structure is over the first and second dielectric layers. A third dielectric layer is on the substrate over the second doped well region and separated a first distance from the second dielectric layer. A second conductive gate structure is over the third dielectric layer. A third doped region of the second conductivity type is implanted in the second doped well region a second distance from the third dielectric layer and the second conductive gate structure.