Jan Sonsky
34Patents
6h-index
35Co-inventors
65Inventor score
Filing activity: May 25, 2005 → Mar 13, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7714292B2 | Geiger mode avalanche photodiode | Electricity | 75 | Active |
| US7906388B2 | Semiconductor device and method for manufacture | Electricity | 17 | Active |
| US7919364B2 | Semiconductor devices and methods of manufacture thereof | Electricity | 14 | Active |
| US9472549B2 | Cascoded semiconductor devices | Electricity | 9 | Active |
| US7671390B2 | Semiconductor device and method for manufacture | Electricity | 7 | Active |
| US7808050B2 | Semiconductor device with relatively high breakdown voltage and manufacturing method | Electricity | 6 | Active |
| US7825011B2 | Method of manufacturing a semiconductor device and semiconductor device obtained by means of said method | Electricity | 6 | Active |
| US8247280B2 | Integration of low and high voltage CMOS devices | Electricity | 5 | Active |
| US9799757B2 | PN junction chemical sensor | Physics | 4 | Active |
| US8541267B2 | FinFET transistor with high-voltage capability and CMOS-compatible method for fabricating the same | Electricity | 4 | Active |
| US8853816B2 | Integrated circuits separated by through-wafer trench isolation | Electricity | 4 | Active |
| US7897478B2 | Semiconductor device with field plate and method | Electricity | 4 | Active |
| US8389392B2 | FinFET with separate gates and method for fabricating a finFET with separate gates | Electricity | 4 | Active |
| US9224634B2 | Method of manufacturing a semiconductor device with an isolation region and a device manufactured by the method | Electricity | 3 | Active |
| US9171837B2 | Cascode circuit | Electricity | 3 | Active |
| US9391187B2 | Semiconductor heterojunction device | Electricity | 3 | Active |
| US9177852B2 | Integrated circuits separated by through-wafer trench isolation | Electricity | 2 | Active |
| US8962461B2 | GaN HEMTs and GaN diodes | Electricity | 2 | Active |
| US8373227B2 | Semiconductor device and method having trenches in a drain extension region | Electricity | 2 | Active |
| US7923345B2 | Methods relating to trench-based support structures for semiconductor devices | Performing Operations; Transporting | 2 | Active |
| US9929263B2 | Semiconductor device and method of making a semiconductor device | Electricity | 1 | Active |
| US9793348B2 | Method of manufacturing a semiconductor device with an isolation region and a device manufactured by the method | Electricity | 1 | Active |
| US10050034B2 | Semiconductor device and associated methods | Electricity | 1 | Active |
| US7956399B2 | Semiconductor device with low buried resistance and method of manufacturing such a device | Emerging Cross-Sectional Technologies | 1 | Active |
| US9917187B2 | Semiconductor device and manufacturing method | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.