Reliable electrical contacts for high power photoconductive switches
US10134927B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2016 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | Feb 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1226
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoconductive switch consisting of an optically actuated photoconductive material, e.g. a wide bandgap semiconductor such as SiC, situated between opposing electrodes. The electrodes are created using various methods in order to maximize reliability by reducing resistive heating, current concentrations and filamentation, and heating and ablation due to the light source. This is primarily accomplished by the configuration of the electrical contact geometry, choice of contacts metals, annealing, ion implantation, creation of recesses within the SiC, and the use of coatings to act as encapsulants and anti-reflective layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.