Lars Voss
40Patents
3h-index
67Co-inventors
62Inventor score
Filing activity: Jan 27, 2011 → Dec 26, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8558188B2 | Method for manufacturing solid-state thermal neutron detectors with simultaneous high thermal neutron detection efficiency (>50%) and neutron to gamma discrimination (>1.0E4) | Physics | 7 | Active |
| US8314400B2 | Method to planarize three-dimensional structures to enable conformal electrodes | Physics | 6 | Active |
| US10903371B2 | Three dimensional vertically structured MISFET/MESFET | Electricity | 3 | Active |
| US9121947B2 | Stress reduction for pillar filled structures | Physics | 3 | Active |
| US8829460B2 | Three-dimensional boron particle loaded thermal neutron detector | Electricity | 2 | Active |
| US11018253B2 | Three dimensional vertically structured electronic devices | Electricity | 1 | Active |
| US10530362B2 | Total internal reflection photoconductive switch | Emerging Cross-Sectional Technologies | 1 | Active |
| US10930506B2 | Gallidation assisted impurity doping | Electricity | 1 | Active |
| US11522542B2 | Wide bandgap optical switch circuit breaker | Electricity | 1 | Active |
| US11784616B2 | High efficiency photoconductive semiconductor switch-based amplifier for high power microwave transmission | Electricity | 1 | Active |
| US9000384B2 | Mixed ionic-electronic conductor-based radiation detectors and methods of fabrication | Physics | 1 | Active |
| US11742424B2 | Three dimensional vertically structured electronic devices | Electricity | 1 | Active |
| US9490318B2 | Three dimensional strained semiconductors | Electricity | 1 | Active |
| US11024734B2 | Three dimensional vertically structured electronic devices | Electricity | 1 | Active |
| US12246155B2 | Silicon carbide nanoneedles and fabrication thereof | Performing Operations; Transporting | 0 | Active |
| US12099269B2 | Optically addressable light valves for high power operation | Physics | 0 | Active |
| US11942760B2 | High-power electrically tunable switch | Electricity | 0 | Active |
| US10685758B2 | Radiation tolerant microstructured three dimensional semiconductor structure | Physics | 0 | Active |
| US9645262B2 | Capacitance reduction for pillar structured devices | Electricity | 0 | Active |
| US11555965B1 | Illumination frustums for photoconductive switches | Physics | 0 | Active |
| US10854771B2 | Three-dimensional co-axial linear photonic switch | Electricity | 0 | Active |
| US10020235B2 | Selective surface treatment of thallium bromide (TLBR)-based detectors to improve longevity and/or restore operational capacity thereof | Electricity | 0 | Active |
| US12310086B2 | Monolithic growth of epitaxial silicon devices via co-doping | Electricity | 0 | Active |
| US12068519B2 | Gyromagnetic nonlinear transmission line for radio frequency signal generation and pulse compression | Electricity | 0 | Active |
| US12170330B2 | Three dimensional vertically structured electronic devices | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.