Method for making a semimetal compound of Pt by reacting elements Pt and Te
US10138571B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 6, 2017 |
| Grant date | Nov 27, 2018 |
| Priority date | — |
| Expiry date | Jul 6, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/46
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The disclosure relates to a method for making semimetal compound of Pt. The semimetal compound is a single crystal material of PtTe2. The method comprises: placing pure Pt and pure Te in a reacting chamber as reacting materials; evacuating the reacting chamber to be vacuum less than 10 Pa; heating the reacting chamber to a first temperature from 600 degree Celsius to 800 degree Celsius and keeping for 24 hours to 100 hours; cooling the reacting chamber to a second temperature from 400 degree Celsius to 500 degree Celsius and keeping for 24 hours to 100 hours at a cooling rate from 1 degree Celsius per hour to 10 degree Celsius per hour to obtain a crystal material of PtTe2; and separating the excessive reacting materials from the crystal material of PtTe2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.