Method for making photonic chip with multi-thickness electro-optic devices and related devices
US10139563B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 30, 2015 |
| Grant date | Nov 27, 2018 |
| Priority date | — |
| Expiry date | Apr 30, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12147
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method is for making a photonic chip including EO devices having multiple thicknesses. The method may include forming a first semiconductor layer over a semiconductor film, forming a second semiconductor layer over the first semiconductor layer, and forming a mask layer over the second semiconductor layer. The method may include performing a first selective etching of the mask layer to provide initial alignment trenches, performing a second etching, aligned with some of the initial alignment trenches and using the first semiconductor layer as an etch stop, to provide multi-level trenches, and filling the multi-level trenches to make the EO devices having multiple thicknesses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.