Patent · US Active

Metal layers for a three-port bit cell

US10141317B2 · kind B2 · utility

0Cited by

12References

17Claims

0Family size

Assignee

QUALCOMM Incorporated · US

Inventors

Niladri Narayan Mojumder · San Diego, US
Ritu Chaba · San Diego, US
Ping-Lin Liu · Shanghai, CN
Stanley Seungchul Song · San Diego, US
Zhongze Wang · San Diego, US
Choh Fei Yeap · San Diego, US

Key dates

Filing date	Nov 9, 2016
Grant date	Nov 27, 2018
Priority date	—
Expiry date	Nov 9, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D89/10
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

An apparatus includes a first metal layer coupled to a bit cell. The apparatus also includes a third metal layer including a write word line that is coupled to the bit cell. The apparatus further includes a second metal layer between the first metal layer and the third metal layer. The second metal layer includes two read word lines coupled to the bit cell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.