Photosensor substrate
US10141357B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 5, 2016 |
| Grant date | Nov 27, 2018 |
| Priority date | — |
| Expiry date | Apr 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/20
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A photosensor substrate achieves TFT property stabilization and further improvement in sensor performance. The photosensor substrate includes a substrate 7, a photoelectric transducer 4, and a transistor 2. The transistor 2 includes a semiconductor layer 22, a drain electrode 23 and a source electrode 21 facing each other in a direction parallel to a plane of the substrate with the semiconductor layer 22 interposed therebetween, a gate insulating film 15 covering the semiconductor layer 22, the drain electrode 23, and the source electrode 21, and a gate electrode 24 facing the semiconductor layer 22 with the gate insulating film 15 interposed therebetween. The photoelectric transducer 4 includes a lower electrode 41 connected to the drain electrode 23 via a contact hole CH1 provided in the gate insulating film 15, a semiconductor film 42, and an upper electrode 43.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.