Tadayoshi Miyamoto
45Patents
11h-index
46Co-inventors
75Inventor score
Filing activity: Dec 16, 1994 → Jan 11, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5696003A | Method for fabricating a semiconductor device using a catalyst introduction region | Emerging Cross-Sectional Technologies | 155 | Expired |
| US5966193A | LCD device having coupling capacitances and shielding films | Electricity | 131 | Expired |
| US6162667A | Method for fabricating thin film transistors | Electricity | 125 | Expired |
| US5821562A | Semiconductor device formed within asymetrically-shaped seed crystal region | Emerging Cross-Sectional Technologies | 88 | Expired |
| US6455359B1 | Laser-irradiation method and laser-irradiation device | Electricity | 75 | Expired |
| US5710050A | Method for fabricating a semiconductor device | Emerging Cross-Sectional Technologies | 71 | Expired |
| US6013544A | Method for fabricating a semiconductor device | Electricity | 54 | Expired |
| US6599790B1 | Laser-irradiation method and laser-irradiation device | Electricity | 39 | Expired |
| US5684552A | Color liquid crystal display having a color filter composed of multilayer thin films | Physics | 38 | Expired |
| US5814835A | Semiconductor device and method for fabricating the same | Electricity | 29 | Expired |
| US6835675B2 | Laser-irradiation method and laser-irradiation device | Electricity | 14 | Expired |
| US9214533B2 | Semiconductor device having transparent electrodes | Electricity | 7 | Active |
| US9520476B2 | Semiconductor device and method for producing same | Electricity | 5 | Active |
| US8492212B2 | Thin-film transistor producing method | Electricity | 4 | Active |
| US10177170B2 | Display device and method for manufacturing same | Physics | 4 | Active |
| US9190524B2 | Thin film transistor substrate, method for producing the same, and display device | Electricity | 4 | Active |
| US10276611B2 | Photosensor substrate | Electricity | 3 | Active |
| US10558097B2 | Active matrix substrate and demultiplexer circuit | Physics | 3 | Active |
| US9341903B2 | Active matrix substrate and liquid crystal display panel including the same | Physics | 2 | Active |
| US6603518B1 | Liquid crystal display capable of reducing amount of return light to TFT and manufacturing method therefor | Physics | 2 | Expired |
| US10141357B2 | Photosensor substrate | Electricity | 2 | Active |
| US9276126B2 | Semiconductor device and method for producing same | Physics | 2 | Active |
| US10355040B2 | Photoelectric conversion device | Electricity | 1 | Active |
| US10950705B2 | Active matrix substrate | Electricity | 1 | Active |
| US10438973B2 | Display device and method for manufacturing same | Physics | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.