Semiconductor device having protection layer wrapping around conductive structure
US10141362B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2018 |
| Grant date | Nov 27, 2018 |
| Priority date | — |
| Expiry date | Mar 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
A semiconductor device having a protection layer wrapping around a conductive structure is provided. The semiconductor device comprises an image sensor device layer, an interconnect layer over the image sensor device layer, a first bonding layer over the interconnect layer, a second bonding layer bonded with the first bonding layer, a substrate over the second bonding layer, and a conductive via passing through the substrate, the second bonding layer, and the first bonding layer. The conductive via comprises a protection layer and a conductive material. The protection layer is peripherally enclosed by the substrate, the second bonding layer, and the first bonding layer. The protection layer covers a sidewall cut formed at an interface of the second bonding layer and the first bonding layer. The conductive material is peripherally enclosed by the protection layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.