Strained AlGaInP layers for efficient electron and hole blocking in light emitting devices
US10141477B1 · kind B1 · utility
5Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2017 |
| Grant date | Nov 27, 2018 |
| Priority date | — |
| Expiry date | Jul 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
Abstract
A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.