Parijat Deb
29Patents
4h-index
17Co-inventors
52Inventor score
Filing activity: Jun 27, 2016 → Nov 21, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9974135B1 | Optoelectronic device and adaptive illumination system using the same | Emerging Cross-Sectional Technologies | 11 | Active |
| US10804429B2 | III-nitride multi-wavelength LED for visible light communication | Electricity | 9 | Active |
| US10141477B1 | Strained AlGaInP layers for efficient electron and hole blocking in light emitting devices | Electricity | 5 | Active |
| US10285236B2 | Optoelectronic device and adaptive illumination system using the same | Emerging Cross-Sectional Technologies | 5 | Active |
| US11081622B2 | III-nitride multi-wavelength LED for visible light communication | Electricity | 4 | Active |
| US10236409B2 | Methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers in light emitting devices | Electricity | 3 | Active |
| US10813184B2 | Optoelectronic device and adaptive illumination system using the same | Emerging Cross-Sectional Technologies | 3 | Active |
| US11211527B2 | Light emitting diode (LED) devices with high density textures | Electricity | 3 | Active |
| US10622206B2 | Methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers in light emitting devices | Electricity | 2 | Active |
| US10541352B2 | Methods for growing light emitting devices under ultra-violet illumination | Electricity | 1 | Active |
| US10522717B2 | Strained AlGaInP layers for efficient electron and hole blocking in light emitting devices | Electricity | 1 | Active |
| US10868213B2 | LED utilizing internal color conversion with light extraction enhancements | Electricity | 1 | Active |
| US11435225B2 | Optoelectronic device and adaptive illumination system using the same | Emerging Cross-Sectional Technologies | 1 | Active |
| US10749070B2 | Method of forming a P-type layer for a light emitting device | Electricity | 1 | Active |
| US11264530B2 | Light emitting diode (LED) devices with nucleation layer | Electricity | 0 | Active |
| US12408481B2 | Light emitting diode (LED) devices with nucleation layer | Electricity | 0 | Active |
| US11959800B2 | Optoelectronic device and adaptive illumination system using the same | Emerging Cross-Sectional Technologies | 0 | Active |
| US11594572B2 | III-nitride multi-wavelength LED for visible light communication | Electricity | 0 | Active |
| US10665759B2 | Reflective structure for light emitting devices | Electricity | 0 | Active |
| US10651340B2 | Reducing or eliminating nanopipe defects in III-nitride structures | Electricity | 0 | Active |
| US11404599B2 | Method of forming a p-type layer for a light emitting device | Electricity | 0 | Active |
| US12013099B2 | Projecting a static light pattern or symbol | Mechanical Engineering; Lighting; Heating | 0 | Active |
| US11069525B2 | Methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers in light emitting devices | Electricity | 0 | Active |
| US11069836B2 | Methods for growing light emitting devices under ultra-violet illumination | Electricity | 0 | Active |
| US11322650B2 | Strained AlGaInP layers for efficient electron and hole blocking in light emitting devices | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.