Perpendicular magnetic tunnel junction device with offset precessional spin current layer
US10141499B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2017 |
| Grant date | Nov 27, 2018 |
| Priority date | — |
| Expiry date | Dec 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device includes a perpendicular magnetic tunnel junction device having a reference layer, a free layer, and a precessional spin current magnetic layer. The precessional spin current magnetic layer has a central axis that is offset from a central axis of the free layer. The device is designed to provide control over the injection of stray fields and the electronic coupling between the precessional spin current magnetic layer and the free layer. Switching speed, switching current, and thermal barrier height for the device can be adjusted. The off-center design may be used to adjust the location of the stray-field injection in the free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.